Main Article Content
Semiconducting SnTe thin films were grown by conventional thermal evaporation technique as well as by rapid thermal annealing technique. The stoichiometric SnTe was achieved by starting with the initial Sn:Te ratio as 1:1.2, 1:1.3 and 1:1.4. Variation of hall coefficient, conductivity and mobility were studied as a function of temperatureand were discussed in terms of light and heavy hole valence band, scattering mechanisms, etc. These results were compared with variation in similar electrical parameters observed in the case of SnTe film grown by thermal evaporation technique and shown that RTA grown films possesses comparative electrical properties.
How to Cite
, D. N. S. (2018). Comparative Electrical Characterization of SnTe Thin Films Grown by Thermal Evaporation and RTA Techniques. International Journal on Future Revolution in Computer Science &Amp; Communication Engineering, 4(1), 130–134. Retrieved from https://ijfrcsce.org/index.php/ijfrcsce/article/view/979